期刊文献+

Temperature dependence of the point defect properties of GaN thin films studied by terahertz time-domain spectroscopy 被引量:6

Temperature dependence of the point defect properties of GaN thin films studied by terahertz time-domain spectroscopy
原文传递
导出
摘要 The dielectric functions of GaN for the temperature and frequency ranges of 10–300 K and 0.3–1 THz are obtained using terahertz time-domain spectroscopy.It is found that there are oscillations of the dielectric functions at various temperatures.Physically,the oscillation behavior is attributed to the resonance states of the point defects in the material.Furthermore,the dielectric functions are well fitted by the combination of the simple Drude model together with the classical damped oscillator model.According to the values of the fitting parameters,the concentration and electron lifetime of the point defects for various temperatures are determined,and the temperature dependences of them are in accordance with the previously reported result.Therefore,terahertz time-domain spectroscopy can be considered as a promising technique for investigating the relevant characteristics of the point defects in semiconductor materials. The dielectric functions of GaN for the temperature and frequency ranges of 10–300 K and 0.3–1 THz are obtained using terahertz time-domain spectroscopy. It is found that there are oscillations of the dielectric functions at various temperatures.Physically, the oscillation behavior is attributed to the resonance states of the point defects in the material. Furthermore, the dielectric functions are well fitted by the combination of the simple Drude model together with the classical damped oscillator model. According to the values of the fitting parameters, the concentration and electron lifetime of the point defects for various temperatures are determined, and the temperature dependences of them are in accordance with the previously reported result.Therefore, terahertz time-domain spectroscopy can be considered as a promising technique for investigating the relevant characteristics of the point defects in semiconductor materials.
出处 《Science China(Physics,Mechanics & Astronomy)》 SCIE EI CAS 2013年第11期2059-2064,共6页 中国科学:物理学、力学、天文学(英文版)
基金 supported by the Special Funds for Major State Basic Research Project (Grant No. 2011CB301900) the 973 project of the Ministry of Science and Technology of China (Grant No. 2011CBA00107) the Hi-tech Research Project (Grant No. 2011AA03A103) the National Natural Science Foundation of China (Grant Nos. 60990311, 60820106003, 60906025, 60936004, 61176063, 61071009, and 61027008) the Specialized Research Fund for the Doctoral Program of Higher Education (Grant No. 20090091110040) the Natural Science of Foundation of Jiangsu province (Grant Nos. BK2011010, BK2010385, and BK2010178) the Fok Ying-Tong Education Foundation (Grant No. 122028)
关键词 THz time-domain spectroscopy GaN film temperature dependence 太赫兹时域光谱 温度依赖性 氮化镓薄膜 缺陷性质 Drude模型 半导体材料 介电函数 振荡行为
  • 相关文献

参考文献6

二级参考文献49

共引文献27

同被引文献27

引证文献6

二级引证文献22

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部