期刊文献+

电源系统健康状态预测与管理综述 被引量:2

Prognostics and health management technology for power systems
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摘要 阐述了国内外电源故障、劣化研究的进展,展望了电源系统健康状态与管理的发展趋势。指出建立电源劣化过程的非线性时变行为模型,探求能反映在线电源异常状态的特征量及其获取方法,研究动态预测电源剩余使用寿命算法,已经成为提高电源系统的可靠性、可维护性和安全性的一种新思路。 The highly reliable embedded systems have been widely applied in the fields of aerospace, nuclear power, high-speed rail, etc., which are related to national strategy and security. The reliability of the power supply directly influences the security of the embedded system, and has been the research focus of electronic information and energy. The progress of study about power fault and degradation was summarized in detail, and the developing trend was discussed. It is proposed that the future developing direction main is to build nonlinear time-varying behavior model of degradation process of power, seek and extract the characteristics of the power abnormal state, and study the dynamic prediction algorithm of remaining useful life of the power, which can provide new ideas for improving power system reliability and maintainability.
出处 《电源技术》 CAS CSCD 北大核心 2013年第10期1881-1883,共3页 Chinese Journal of Power Sources
基金 国际科技合作项目(2012D FA 11340) 国家自然科学基金项目(61070049 61202027) 北京市自然科学基金项目(4122015) 北京市教育委员会科技计划面上资助项目(K M 201210028001)
关键词 嵌入式系统 电源 劣化 剩余使用寿命 embedded system power degradation remaining useful life
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参考文献30

  • 1吕长志,马卫东,谢雪松,张小玲,刘扬,黄春益,李志国.DC/DC电源模块可靠性的研究[J].北京工业大学学报,2010,36(7):890-895. 被引量:14
  • 2ANDERSON J M, COX R W, NOPPAKUNKAJORN J. An on-line fault diagnosis method for power electronic drives[C]//IEEE Electric Ship Technologies Symposium. Alexandria: IEEE, 2011:492-497.
  • 3贺威,张正选.总剂量辐射下的NMOS/SOI器件背栅阈值电压漂移模型[J].功能材料与器件学报,2010,16(4):403-406. 被引量:1
  • 4刘远,李斌,何玉娟.电场偏置对MOS器件电离辐射效应的影响[J].微电子学,2010,40(3):440-443. 被引量:3
  • 5VANESSA S, FRANCOIS F, JACQUES H J. Ageing and failure modes of IGBT modules in high-temperature power cycling [J]. IEEE Transactions on Industrial Electronics,2011,58(10): 4931- 4941.
  • 6WEBER Y. Mechanism of breakdown voltage wavering in power MOSFET induced by silicon crystalline defect[J]. Microelectronics Reliability, 2011, 51 (9/11): 1912-1980.
  • 7MARTINEAU D, MAZEAUD T,LEGROS M,et al. Characterization of alterations on power MOSFET devices under extreme electro- thermal fatigue[J]. Microelectronics Reliability, 2010,50(9/11): 1768-1772.
  • 8TOUNSI M, OUKAOUR A, TALA I B, et al. Characterization of high-voltage IGBT module degradations under PWM power cycling test at high ambient temperature [J]. Microelectronics Reliability, 2010, 50(9/11):1810-1814.
  • 9BELMEHDI Y, AZZOPARDI S, DELETAGE J Y, et al. Exper- imental electro-mechanical static characterization of IGBT bare die under controlled temperature [J]. Microelectronics Reliability,2010, 50(9/11):1815-1821.
  • 10郑利兵,韩立,刘钧,温旭辉.基于三维热电耦合有限元模型的IGBT失效形式温度特性研究[J].电工技术学报,2011,26(7):242-246. 被引量:40

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