摘要
本文研究了脉冲激光沉积(PLD)生长过程中,铝掺量、氧压及衬底温度等实验参数对ZnO:Al(AZO)薄膜生长的影响,并利用扫描电子显微镜、原子力显微镜、X射线衍射、霍尔效应、光透射光谱等实验手段对其透明导电性能进行了探讨.变温霍尔效应和光透射测量表明,当靶材中铝掺量大于0.5 wt%时,所制备AZO薄膜中铝施主在80 K时已完全电离,因Bernstein-Moss(BM)效应其带隙变大,均为重掺杂简并半导体.进一步系统研究了氧压和衬底温度对AZO薄膜透明导电性能的影响,实验发现当氧压为1 Pa,衬底温度为200℃时,AZO导电性能最好,其霍尔迁移率为28.8 cm2/V·s,薄膜电阻率最小可达2.7×10-4Ω·cm,且在可见光范围内光透过率超过了85%.氧压和温度的增加,都会导致薄膜电阻率变大.
The influences of aluminum doping, oxygen pressure, and substrate temperature on the transparent conductive properties of ZnO：A1 （AZO） films grown by pulsed laser deposition （PLD） were investigated using scanning electron microscope, atomic force microscope, X-ray diffraction, Hall effect measurements, and optical transmission spectrum. When the aluminum doping concentration is over 0.5 wt%, all the PLD grown AZO films are degenerated and the aluminum donors are thermal ionized even at a low temperature of 80 K. As a result, the bandgap of AZO film shows blue shifts due to the Bernstein-Moss effect as further confirmed by optical transmission spectrum. The influences of the oxygen pressure and substrate temperature on the transparent conductive property of AZO films were further studied. When the oxygen pressure is 1 Pa and the substrate temperature is 200 ~C, the best conductivity property of AZO thin film is obtained with Hall mobility of 28.8 cm2/V.s and film resistivity of 2.7 x 10-4 ~.cm. Moreover, the light transmittance in the visible range exceeds 85%. However, as the oxygen pressure and temperature continue to increase, the film resistivity will increase.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2013年第21期301-307,共7页
Acta Physica Sinica
基金
国家自然科学基金(批准号:11174112
51002065)
山东省泰山学者基金(批准号:TSHW20091007)
教育部新世纪优秀人才支持计划(批准号:NCET-11-1027)
山东省杰出青年基金资助(批准号:JQ201214)资助的课题~~
