摘要
直拉法易于制备大直径单晶,但在其拉制过程中,晶体生长系统中的熔体会产生自然对流、毛细对流以及强迫对流。在上述三种熔体对流的相互作用下,会使晶体中的氧、碳等杂质产生不均匀分布而影响晶体质量。通过在熔体空间中引入磁场可以有效抑制熔体各种对流,应用于硅单晶生长系统的磁场有横向磁场、纵向磁场和勾形磁场,其中勾形磁场在控制大直径硅单晶中的氧等杂质的含量以及径向分布均匀性方面效果较好。
Czochralski method is easy to pull large diameter single crystal, but in its pulling process, the melt of crystal growth system will produce natural convection, Marangoni convection and forced convection. Under the interactions of the three types of melt convection, it will make uneven distribution of oxygen, carbon and other impurities which will affect crystal quality. It can effectively suppress all kinds of melt convections through the introduction of the magnetic field. There is transverse magnetic field, the longitudinal magnetic field or cusp magnetic field applied to silicon single crystal growth system. Cusp magnetic field is more effective to control oxygen and other impurities＇ content and uniformity of the radial distribution of large diameter silicon single crystal.
出处
《机械》
2013年第11期77-80,共4页
Machinery
基金
2011年衢州市科技计划项目<大直径高质量太阳能级硅单晶磁场直拉技术研究>(20111041)
关键词
直拉硅单晶
大直径
高质量
熔体对流
均匀性
磁场
CZ Si crystal
large-diameter
high quality
melt convection
uniformity
magnetic field
