摘要
利用调制光谱技术研究了以分子束磊晶法成长于GaAs基板上的GaN薄膜的光学特性。结果表明，在PR、CER及PzR谱线中均可观察到激子跃迁信号En与旋轨道分裂信号（E0＋△0），且分裂量△0约为22meV。在15～300K的温度范围内均可观测到激子跃迁信号E0、自旋轨道分裂信号（E0＋△0）及DA-Pair信号；但温度在400K和500K时谱线中只存在激子跃迁信号E0与DA—Pair信号，而观察不到信号（E0＋△0）。随着温度的升高，样品的跃迁信号E0与自旋轨道分裂信号（E0＋△0）逐渐向低能量反方向移动。
GaN film growed on GaAs substrate by the molecular beam epitaxial growth had been studied by the modulation spectroscopy technique in this paper. Results show that the exciting transition signal Eo and spin-orbit splitting signal （E0 ＋△0 ） can be observed in the PR, CER and PzR spectral lines and Ao is about 22 meV. The exciting transition signal Eo, spin orbit split signal （ E0 ＋△0） and DA-Pair signal can appear in the temperature range from 15 to 300 K. The signals of Eo and DA-Pair except （E0 ＋△0） were observed at 400 K and 500 K. As the temperature increases, the transition signal Eo and spin orbit split signal （E0 ＋△0 ） move to the low energy in the opposite direction.
出处
《陕西理工学院学报（自然科学版）》
2013年第6期31-34,48,共5页
Journal of Shananxi University of Technology:Natural Science Edition
基金
国家自然科学基金资助项目(41105107)
陕西省自然科学基础研究计划项目(2012JM5014)
陕西省教育厅专项科研计划项目(11JK0553)
关键词
调制光谱
半导体
氮化镓
光学特性
跃迁信号
modulation spectroscopy
semiconductor
GaN
optical property
transition signal
