摘要
采用直流磁控溅射的方法 ,在 Si(111)基片上沉积 Al N(10 0 )面择优取向薄膜 ,研究了溅射功率对 Al N薄膜结构及表面粗糙度的影响。结果表明 ,随着溅射功率的增加 ,沉积速率增大 ,但薄膜结构择优取向度变差 ,表面粗糙度增大 ,这说明要制备择优取向良好、表面粗糙度小的 Al N薄膜 ,需选择较小的溅射功率。
The AlN thin films with preferred orientation were deposited on Si(111) substrates using magnetron reactive sputtering. The effect of sputtering power on surface roughness and structure of the AlN thin films has been investigated. The experimental results indicate that as sputtering power increases, deposited rate also increases, but surface roughness and preferred orientation degree of AlN thin films become bad. Therefore, lower sputtering power should be chosen for preparing AlN thin films of good quality.
出处
《稀有金属材料与工程》
SCIE
EI
CAS
CSCD
北大核心
2000年第6期394-397,共4页
Rare Metal Materials and Engineering
基金
国家自然科学基金!(2 97410 0 4)
山西省自然科学基金
