摘要
采用移动加热器法,成功生长出尺寸为φ55 mm×70 mm的CdZnTe晶体。采用电子探针、光致发光谱等方法,测试了晶体径向的成分和缺陷分布,并与垂直布里奇曼法生长的同成分CdZnTe晶体进行了对比分析。结果表明,移动加热器法生长的CdZnTe晶体沿径向的成分和缺陷分布均匀,均优于垂直布里奇曼法生长的晶体。
CdZnTe crystal with the dimensions of φ55mm×70mm was grown by travelling heater method （THM）. The composition distribution along radial direction of the crystal was measured quantitatively by EPMA. The distribution of defects along radial direction was investigated by photoluminescence （PL） spectrum. The results showed that in comparison with CdZnTe crystal grown by Bridgman method, the uniformity of both composition and defect density in the THM grown crystal improved greatly.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2013年第11期2215-2219,2229,共6页
Journal of Synthetic Crystals
基金
国家自然科学基金(50902114)
