摘要
采用电子束反应蒸镀方法在玻璃衬底上在低温下外延生长了沿 ｃ－轴高度取向的单晶 ＺｎＯ薄 膜，研究了衬底温度及反应气氛中的 Ｏ２对薄膜结构的影响，结合荧光光谱（ＰＬ）和荧光激发光谱（ＰＬＥ） 研究了玻璃上ＺｎＯ薄膜的光学跃迁特性．在３２５℃下获得的单晶薄膜（００２）晶面的ｘ射线衍射峰强度 最大且线宽最窄（０．２８）．反应气氛中的 Ｏ２对 ＺｎＯ 薄膜结构的影响不明显，但对薄膜的 ＰＬ及 ＰＬＥ 特性的影响显著．
Epitaxial growth of monocrystalline ZnO thin films was achieved by reactive e- beam evaporation on glass substrates at low temperature. The influences of growth temperature and O2 pressure in the reaction chamber on the microstructural evolution of achieved ZnO films were studied. The results showed that the microstructure of ZnO films was afFected significantly by growth temperature, and the optimal growth temperature is between 300'c and 350'c. Highly c--axis oriented ZnO films with small line width (only 0.28') of (002) X-ray diffraction peak were obtained at growth temperature of 325'c. Measurements of photoluminescence (PL) and photoluminescence excitation (PLE) were also carried out to demonstrate the optical transitions in the ZnO films. Although XRD analysis showed the crystalline structures of ZnO films grown under different O2 pressure did not change, the PLE spectra revealed that the absorption characteristic near the band edge was remarkably improved with the increase of oxygen content in the ZnO films.
出处
《材料研究学报》
EI
CAS
CSCD
北大核心
2000年第5期485-488,共4页
Chinese Journal of Materials Research
基金
国家自然科学基金资助项目!69606006
浙江省自然科学基金资助项目!696027.
关键词
电子束反应蒸镀
单晶ZnO薄膜
玻璃衬底
低温生长
reactive e-beam evaporation, monocrystalline ZnO thin films, glass substrate, structural and optical properties
