摘要
采用磁控溅射法,以ITO/Glass为衬底,制备了具有电阻转变特性的HfO2薄膜。X射线光电子能谱(XPS)分析发现,薄膜中的Hf、O元素不成化学计量比,薄膜中可能存在大量氧空位。电学测试结果表明,HfO2薄膜表现出明显的双极电阻转变特性,并且表现出良好的可靠性(室温下可重复测试102次以上)和稳定的保持性能(0.5 V偏压下保持104 s以上),高低阻态比值达到104。基于XPS以及电学分析,薄膜的导电过程可用与氧空位相关的空间电荷限制电流模型解释。
The HfO2 thin films with resistive switching behaviors were grown on indium tin oxide （ITO）/Glass substrates by radio-frequency （RF） magnetron sputtering method. The results of electrical tests indicate that HfO2 thin films show a bipolar resistive switching behavior. Using Ti as a buffer layer on the cathodal side of the memory cell, relatively reliable endurance （〉2×10^2 cycles at 20 ℃） and long data retention time （〉104s at 20℃） have been demonstrated, and the high-resistance to low-resistance ratio can reach 104. Based on the electrical property test results, the phenomena can be correlated with oxygen-vacancy-related traps. Space charge limited current （SCLC） mechanism is believed to be the reason for the resistive switching from the OFF state to the ON state.
出处
《稀有金属材料与工程》
SCIE
EI
CAS
CSCD
北大核心
2014年第1期24-27,共4页
Rare Metal Materials and Engineering
基金
the Research Fund of the State Key Laboratory of Solidification Processing(NWPU)(58-TZ-2011)
the "111" Project under Grant(B08040)
Northwestern Polytechnical University(NPU)Fundamental Research(JC201111)
National Natural Science Foundation of China(51202196)
关键词
磁控溅射法
HfOx薄膜
电阻转变特性
双极性
magnetron sputtering
HfOx thin film
resistive switching behaviors
bi-polar
