摘要
SOI技术作为 2 1世纪的硅集成技术 ,越来越受到人们的关注。文章从寄生电容、闭锁效应、热载流子效应、体效应及辐射效应等几个方面详细讨论了 SOI器件对体硅器件的优势 ,并讨论了当前
As a silicon integration technology in the 21st century, silicon on insulator (SOI) has become more and more attractive The superiority of SOI devices over bulk Si devices is analyzed in detail, with regard to parasitic capacitance, latch up effect, hot carrier effect, bulk effect and radiation effect Current research subjects of SOI technology are examined and its development trend in the future is discussed
出处
《微电子学》
CAS
CSCD
北大核心
2001年第1期1-5,共5页
Microelectronics
关键词
SOI
SIMOX
硅集成技术
微电子
Silicon on insulator
Bulk silicon
Separation by Implanted Oxygen
Si integration
