摘要
氧等离子体处理高阻Ｐ型（１００）硅片上的聚硅烷涂层制备ＳｉＯ_２／Ｓｉ结构。其ＭＯＳ结构平带电压随氧等离子体处理时间、反应室气压、射频功率等条件的改变而变化，平带电压最小可达－０．５５～－０．８８Ｖ，比同一环境热氧化制备的ＳｉＯ_２／Ｓｉ结构平带电压小得多。
The SiO2/Si structure was formed when ploysilane coating on Si substrate was treated by O2-plasma method. The flat-band voltage was measured by the conventional MOS capacitance method. The results showed that the flat-band voltage was dependent on the conditions of O2-plasma such as reactant pressure, treatment time and radio-frequency power. When an optimal treatment condition was selected, it was up to a minimal value in the range of --0.55^-0.88V, which was less than that of SiO2/Si structure by thermal oxidation under the same experimental environment.
出处
《半导体技术》
CAS
CSCD
北大核心
2001年第1期57-59,共3页
Semiconductor Technology
基金
国家自然科学基金!(29771024)
