摘要
采用TFA-MOD法在LaAlO3单晶基片上制备出了五层YBa2Cu3O7-δ薄膜,膜层总厚度为1!m,临界电流密度Jc达到1.6MA/cm2,临界电流Ic为160A/cm。单层膜与三层膜的Jc值分别为3.5、1.75 MA/cm2;三层膜和五层膜截面TEM形貌中均无裂纹和明显空洞产生,各层之间的界面平滑。随着膜层厚度的增加,临界电流密度降低,主要原因可能是膜性能的劣化。
Five-layer YBa2Cu3O7-δ film was prepared on LaAlO3 single crystal substrate by TFA-MOD, with total film thickness of 1 μm,critical current density （Jc） of 1.6 MA/cm^2 and critical current （L） of 160 A/cm. The Jc values of single-layer film and three-layer film are 3.5 MA/cm^2 and 1.75 MA/cm^2 ,respectively. No cracks and obvious pores are observed in cross-sectional TEM images of three-layer film and five-layer film, and interfaces among the layers are smooth. With the increase of film thickness, critical current density decreases ,probably caused by film performance degradation.
出处
《稀有金属与硬质合金》
CAS
CSCD
北大核心
2014年第1期34-37,共4页
Rare Metals and Cemented Carbides
