摘要
InGaAs器件具有光谱响应宽、量子效率高、响应速度快、数字化读出、高温工作、可靠性好以及寿命长等优点,符合新一代微光器件的发展需求,在国际上成为固体微光器件的一种新选择,获得了重要的发展和应用。文章就InGaAs固体微光器件材料属性、器件性能以及成像特点等几方面进行了详细分析,介绍了当前InGaAs器件的发展趋势,以及研制320×256 InGaAs阵列的最新进展。研究结果表明InGaAs材料生长及器件工艺具有较好的可控性和稳定性,为实现高性能、实用化的InGaAs固体微光器件提供了技术支撑。
InGaAs devices has been chosen as new candidate of solid-state low-light devices because of advantages such as wide response wavelength, high quantum efficiency, high device performance, digitalized readout, high temperature operation, high reliability and long lifetime etc., it has gained vital development and application in the world. The InGaAs material properties, devices performance and imagery characterization was analyzed in detail, InGaAs devices development trend was introduced, the new advancement of 320＆#215;256 InGaAs arrays was depicted. The results of study showed both material growth and devices fabrication technology of InGaAs devices were easy to control and have excellent stability, providing technical support for realizing high performance and practical devices.
出处
《红外技术》
CSCD
北大核心
2014年第2期81-88,共8页
Infrared Technology
基金
国家自然基金重点项目
编号U1037602
关键词
固体微光器件
量子效率
高温器件
雪崩二极管
InGaAs
InGaAs
solid-state low-light devices
quantum efficiency
high temperature operation
avalanche diode
