摘要
提出了一种基于半分析法的高速电子迁移率半导体晶体管小信号模型的提取方法.此方法是用测试结构的方法来提取焊盘电容和寄生电感,半分析法来提取寄生电阻,提高了寄生电阻的提取精度.在频率高达40 GHz的范围内,多偏置情况下模拟的S参数和测试的S参数曲线吻合良好,证明这种方法是正确的.
A semi-analytical small signal parameter extraction method for high electron-mobility transistor （HEMT） under different bias conditions is presented. Based on test structure to determine the pad capacitance and parasitic inductances, the semi-analysis method is used to extract parasitic resistances and to improve the precision of the parasitic resistance in the small signal model. The agreement between the measured S-parameters and simulated ones is excellent over the frequen- cy range up to 40 GHz under muhibias condition.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
2014年第1期72-77,共6页
Journal of Infrared and Millimeter Waves
基金
Supported by National Nature Science Foundation of China(61176036)
关键词
高速电子迁移率半导体晶体管
寄生电阻
多偏置情况
半分析法
小信号模型
high electron-mobility transistor
parasitic resistances
muhibias condition
semi-analysis method
sr＇nall sig-nal model
