摘要
以AlN粉为原料,TiN粉为调节剂,添加稀土金属(Sm2O3,Y2O3,)烧结助剂在N2气氛下,采用放电等离子烧结技术在1 700℃,25 MPa下保温10 min制备了相对密度高于98%的AlN陶瓷。引入导电相TiN对AlN陶瓷电性能进行改性,AlN复合陶瓷的相对密度随着TiN含量的增加而有所下降,电阻率出现明显的导电渗流现象,渗流阀值出现在质量分数为26%左右。通过X射线衍射、扫描电镜和X射线光电子能谱分析可知:AlN烧结体含有主晶相AlN、第二相稀土金属铝酸盐和间隙相TiN,一般认为,低熔点的稀土金属铝酸盐促进了AlN陶瓷的烧结致密化,导电相TiN提供了导电的自由电子致使陶瓷体的电性能降低。
AlN powder doped with TiN and Re2O3 （Sm2O3,Y2O3） was sintered at 1 700 ℃ by spark plasma, under 25 MPa for 10 min in N 2 atmosphere to manufacture an AlN composite ceramic with relative density higher than 98 %. Conductive phase TiN was introduced to AlN ceramics to modify the electrical properties. The relative density of AlN composite ceramic decreases with the increase of TiN content. The resistivity shows significant conductive percolation phenomenon, and the percolation threshold is about 26%. The XRD, SEM and XPS testings show that the AlN sintered body comprises AlN crystalline phase, the rare earth aluminate and the TiN. Generally, the rare earth aluminate with a low melting point promotes the densification of AlN nitride ceramics. The TiN conductive phase provides the free electron, which the results in the decrease of the electrical properties of the ceramic body.
出处
《半导体技术》
CAS
CSCD
北大核心
2014年第3期204-209,共6页
Semiconductor Technology
基金
国家重大科技专项资助项目(2013ZX02104001)
