摘要
基于基尔霍夫定律,利用砷化镓(GaAs)半导体激光器作为标准光源设计了一种反射式光谱发射率测量装置.使用该装置在300K至873K之间对Al5052的光谱发射率进行了系统的研究,并利用最小二乘法对测量数据进行了线性拟合.研究结果表明:Al5052的光谱发射率随着温度的升高而缓慢增大.通过对673K,773K,823K,873K4个温度点持续5h的恒温测量发现:当温度小于823K时,Al5052的光谱发射率非常稳定,随着时间的增加基本保持不变;当温度大于823K时,在开始的2h内,光谱发射率随着时间的增加而增大.2h之后,由于表面氧化达到一定程度,光谱发射率数值开始趋于稳定.
A reflective spectral emissivity measurement apparatus was designed based on the Kirchhoff＇s law by using the GaAs semiconductor laser as the standard radiation source. The spectral emissivity of aluminum alloys AL5052 was measured by using this apparatus with the temperatures range from 300 up to 873 K. The determined data showed an increasing emissivity. This trend was approximated by a linear least-squares fit yielding. Setting the spectral emissivity measurement apparatus at four given temperatures （673 K, 773 K, 823 K, 873 K） for 5 h, the result showed the spectral emissivity of aluminum alloys AL5052 was very stable below 823 K, and it did not change with time; However it increased due to the growing oxide layer with time above 823 K and tended to be stable after 2 h.
出处
《河南师范大学学报（自然科学版）》
CAS
北大核心
2014年第1期36-40,共5页
Journal of Henan Normal University(Natural Science Edition)
基金
国家自然科学基金(61127012
61307122)
贵州省科学技术基金黔科合J字[2012]2325
黔西南州科技局科技计划2013-4
