摘要
通过测量p+Si/PEDOT∶PSS/Tips-PEN/Ag器件的J-V特性,研究了退火时间对溶液法制备Tips-PEN薄膜电流传输特性的影响。实验结果表明,在退火时间为2h和5h的条件下,随偏置电压的增加,双对数J-V曲线存在斜率依次为2,大于3以及2的不同区域,而在退火时间达到10h后,低电压下斜率为2的区域消失。根据空间电荷限制电流模型,分析了不同区域的电流传输机理,并提取了陷阱密度和空穴的迁移率。在退火时间为10h时,材料有最低的陷阱密度5.70×1018/cm3和最大的空穴迁移率1.68×10-4 cm2/(V·s),其在低偏置下传输特征的改变表明与溶剂残留有关的单一能级陷阱极大减小。
The influence of annealing time on charge transport properties of solution-processed Tips- Pentacene was investigated by the measured J-V property of p＋Si/PEDOT ＂ PSS/Tips-PEN/Ag. The results show that with the increasing bias voltage, the J-V curves of the devices annealed for 2 and 5 h in double-logarithmic scale exist different regions, where slopes are 2, larger than 3 and 2 successively, but the curve of the device annealed for more than 10 h doesn＇t have initial region with the slope equal to 2. Using Space Charge Limited Current model, charge transport mechanisms in different regions were analyzed,and the hole trap densities and mobilities were extracted. Annealed for more than 10 h, material has the lowest trap density of 5.70X 1018/cm3 and the maximum hole mobility of 1.68X 10-4 cm2/（V s）. Meanwhile, the transport mechanism of the material annealed for more than 10 h chan- ging shows that the single trap density, relevant to solvent residues, deduces Considerably.
出处
《液晶与显示》
CAS
CSCD
北大核心
2014年第2期219-223,共5页
Chinese Journal of Liquid Crystals and Displays
基金
国家自然科学基金(No.60776056)
