摘要
基于电迁移法制备了弯曲形状的铝微米带,可作为连接件直接应用于微机电系统和光电器件中。试验所需试样是一层沉积在TiN层的铝膜,并在铝膜的阳极端制作原子排出孔。试验结果表明,铝微米带的生长驱动力来自于铝原子积聚产生的压应力,排出孔的位置靠近铝膜边缘,使铝原子在排出孔两侧的析出速率出现差异,导致铝微米带出现自发弯曲生长现象。
Curved Al micro-belts were fabricated by utilizing electromigration, and the micro-belts can be used as the adapting pieces in microelectromechanical systems and photoelectric devices. The required sample was an aluminum film deposited on a TiN film with an atom discharge hole at the anode end. It is found that the driving force for micro-belt growth is the compressive stress due to atom accumulation. The position of the hole close to the edge of the Al film leads to unbalanced discharge of atoms on the two sides of the hole, and the grown micro- belt was curved spontaneously.
出处
《半导体光电》
CAS
CSCD
北大核心
2014年第1期50-52,共3页
Semiconductor Optoelectronics
基金
浙江省钱江人才资助项目(QJD1302007)
嘉兴学院重点科研项目(70112025BL)
关键词
电迁移
铝微米带
薄膜
弯曲生长
electromigration
Al micro-belt
thin film
curved growth
