摘要
采用低温光致发光谱技术研究了核辐射探测器用高阻CdZnTe晶体。发现PL谱中的三个特征峰均与晶体质量有关,其中(D0,X)峰FWHM值和I DAP/I(D0,X)与晶格完整性和浅能级缺陷密度有关联,D2峰则与位错密度密切相关。采用双晶X射线摇摆曲线和位错腐蚀坑密度对此表征进行了验证。低温PL谱测试结果显示晶体质量较高的CdZnTe晶片,其探测器的能谱分辨率也相对较高。
CdZnTe crystal with high resistance for nuclear radiation detector was studied by the technology of low temperature photoluminescence （PL） spectrum. The results show that the three characteristic areas are all related to crystal quality. The FWHM value of （D^0, X） peak and IDAp/I（D^0,X） correlate to the lattice integrity and the density of shallow level defects, and D2 peak is closely related to the dislocation density. Double crystal X-ray rocking curve （DCXRC） and dislocation etch pit density（EPD） are used to confirm the last characterization. High quality CdZnTe wafers demonstrated by low temperature PL spectrum are found possessing higher spectral resolution of manuiactured detectors.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2014年第2期321-326,332,共7页
Journal of Synthetic Crystals
基金
国家自然科学基金(50902114)
国家重大科学仪器设备开发专项(2011YQ040082)
