期刊文献+

BiInO_3基压电膜的脉冲激光沉积法制备及其性能

Preparation and properties of BiInO_3-based piezoelectric thin films deposited by pulsed laser deposition
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摘要 以PbTiO3为模板,采用脉冲激光沉积(pulsed laser deposition,PLD)法制备了0.20BiInO3-0.80PbTiO3(20BI-PT)高温压电薄膜.X射线衍射谱显示20BI-PT样品的[100]峰出现了明显的劈裂,表明样品具有更高的四方对称性.场发射扫描电镜照片显示20BI-PT样品中出现了部分[111]取向的三角形晶粒.20BI-PT样品的铁电剩余极化(Pr)为0.28C·m-2,矫顽场(Ec)为12MV·m-1.20BI-PT样品的横向压电系数(e31,f)为(-4.7±0.6)C·m-2.介电温度谱显示20BI-PT样品的居里温度达590℃,且介电峰没有明显的频率依赖性. Using PbTiOa as template, 0.20BilnO3 - 0.80PbTiO3 (20BI - PT) high temperature thin films were deposited by PLD. X-ray diffraction patterns show that the [100] peak splits which indi- cates the higher tetragonality in 20BI - PT samples. FESEM pictures show there are some I-Ill]- oriented grains inlaid in the faceted grains. The remanent polarization (Pr) and coercive field (Ec) of 20BI-PT are ~ 0.28 C- m-2 and--12 MV ~ m-1, respectively. The transverse piezoelectric coefficient (eal.f) of 20BI -PT is (--4.7±0.6)℃ m-2. The temperature dependence of dielectric permittivity of 20BI -PT shows the high Curie temperature of 590 ~C, with weak frequency depend- ence.
出处 《扬州大学学报(自然科学版)》 CAS 北大核心 2014年第1期26-29,共4页 Journal of Yangzhou University:Natural Science Edition
基金 国家自然科学基金资助项目(51072177) 江苏省高校自然科学基金资助项目(08KJB140011)
关键词 薄膜 脉冲激光沉积 铁电 压电 thin films pulsed laser deposition ferroelectricity piezoelectricity
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参考文献12

  • 1TURNER R C, FUIERER P A, NEWNHAM R E, et al. Materials for high temperature acoustic and vibration sensors: a review [J]. Appl Acoust, 1994, 41(4): 299-324.
  • 2HUANG Z, ZHANG Q, WHATMORE R W. Structure development in the early stages of annealing of sol-gel prepared lead zirconate titanate thin films [J]. J Appl Phys, 1999, 86(3): 1662-1669.
  • 3EITEL R E, RANDALL C A, SHROUT T R, et al. New high temperature morphotropic phase boundary pie- zoelectrics based on Bi(Me)O3 -PbTiO3 ceramics [J]. Jpn J Appl Phys, 2001, 40(10): 5999-6002.
  • 4李信民,吴静,王伟,毛翔宇,陈小兵.Bi_5Fe_(0.7)Ni_(0.3)Ti_3O_(15)多铁陶瓷的电磁性能[J].扬州大学学报(自然科学版),2011,14(2):35-39. 被引量:1
  • 5EITEL R E, RANDALL C A, SHROUT T R, et al. Preparation and characterization of high temperature per- ovskite ferroelectrics in the solid-solution (1-x)BiScO2 -xPbTiO3 [J]. Jpn J Appl Phys, 2002, 41(4A) : 2099- 2104.
  • 6DUAN Runrun, SPEYER R F, ALBERTA E, et al. High Curie temperature perovskite BiInO3 -PbTiOa ceramics [J]. J Mater Res, 2004, 19(7): 2185-2193.
  • 7ZHANG Shujun, XIA Ru, RANDALL C A, et al. Dielectric and piezoelectric properties of niobium-modified BiInO3 -PbTiO3 perovskite ceramics with high Curie temperatures [J]. J Mater Res, 2005, 20(8): 2067-2071.
  • 8KO S W, YEO H G, TROLIER-MCKINSTRY S. Growth and properties of chemical solution deposited BiInO3 - PbTiO3 films [J]. Appl Phys Lett, 2009, 95(16): 162901: 1-3.
  • 9LEE S Y, KO S W, LEE S, et al. Mn-doped 0.15BiInO3 - 0.85PbTiO3 piezoelectric films deposited by pulsed laser deposition [J]. Appl Phys Lett, 2012, 100(21): 212905: 1-3.
  • 10LI Yanxi, YANG Yaodong, YAO Jianjun, et al. Controlled growth of epitaxial BiFeO3 films using self- assembled BiFeO3 -CoFe2O4 multiferroic heterostructures as a template [J]. Appl Phys Lett, 2012, 101(2): 022905: 1-5.

二级参考文献17

  • 1赵苏串,李国荣,张丽娜,王天宝,丁爱丽.Na_(0.25)K_(0.25)Bi_(0.5)TiO_3无铅压电陶瓷的介电特性研究[J].物理学报,2006,55(7):3711-3715. 被引量:10
  • 2PRELLIER W, SINGH M P, MURUGAVER P. The single-phase multiferroic oxides: from bulk to thin film [J]. J Phys Condens Matter, 2005, 17(30): 803-832.
  • 3CATALAN G, SCOTT J F. Physics and applications of bismuth ferrite[J]. Adv Mater, 2009, 21(24) : 2463- 2485.
  • 4WANG J, NEATON J B, ZHENG H, et al. Epitaxial BiFeO3 multiferroic thin film heterostructures[J]. Science, 2003, 299(5613): 1719-1722.
  • 5SMOLENSKⅡ G A, CHUPIS I E. Ferroelectromagnets [J]. Sov Phys Usp, 1982, 25(7): 475-493.
  • 6MAO Xiang-yu, WANG Wei, CHEN Xiao-bing. Electrical and magnetic properties of BisFeTi3O15 compound prepared by inserting BiFeO3 into Bi4 Ti3012 [J]. Solid State Commun, 2008, 147(5/6): 186-189.
  • 7DONG X W, WANG K F, WAN J G, et al. Magnetoeapacitance of polycrystalline BisTi3FeO15 prepared by sol- gel method [J]. J Appl Phys, 2008, 10a: 094101: 1-a.
  • 8PARK B H, KANG B S, BUS D, et al. Lanthanum-substituted bismuth titanate for use in non-volatile memo- ries[J]. Nature, 1999, 401(6754): 682-684.
  • 9ISMAILZADE I G, NESTERENKO V I, MIRISHILI F A, et al. X-ray and electrical studies of the system Bi4 Ti3 O12-BiFeO3 [J]. Soy Phys: Crystallogr, 1967, 12(3) : 400-404.
  • 10WANG Wei, SUN Jia-bao, MAO Xiang-yu, et al. Structural and electrical characterization of chemical-solu- tion-derived BisFeTi3O15 thin films [J]. J Phys D: Appl Phys, 2008, 41.. 155418: 1-6.

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