摘要
采用高温固相反应法制备6 0mmYBa2 Cu3O7-x(YBCO)靶材 ;通过直流磁控溅射后退火法制备具有不同过渡层 (SiO2 /Si,ZrO2 /SiO2 /Si)的薄膜 .对于Si为衬底的YBa2 Cu3O7-x薄膜 ,当x >0 .5时 ,薄膜的导电性由超导态转向半导体态 .进行了X射线衍射(XRD)分析 ,电阻温度系数 (RTC)和Hall系数测试 ,并进行Raman散射的微观分析实验 ,认为该半导体薄膜可用作室温工作的红外测辐射热计 (Bolometer)灵敏元 .
mm YBa 2Cu 3O 7-x (YBCO) target material was prepared by high_temperature solid_phase reaction and YBCO film was manufactured which was deposited on Si substrate with different buffer layers (SiO 2/Si, ZrO 2/SiO 2/Si ) by DC magnetic sputtering and annealing. When x >0.5 the conductance of the film transforms from superconducting phase to semiconducting phase. The microstructure of YBCO film was analyzed by XRD and the resistance temperature coefficient(RTC) values, Hall effect and Raman shift of YBCO film were measured. It is believed that the semiconducting YBCO thin film will act as new sensor elements of IR bolometer working at room temperature.
出处
《硅酸盐学报》
EI
CAS
CSCD
北大核心
2000年第6期589-591,共3页
Journal of The Chinese Ceramic Society
基金
国防科工委跨行业重点项目! (CL96 -1)
