摘要
随着科技的不断发展,信息处理效率的提高,微电子器件的尺寸越来越小,这使得微电子器件的可靠性问题逐渐凸显出来.微电子器件可靠性主要受四个方面的影响:栅氧化层、热载流子、金属化、静电放电.通过对国内外现状的分析,主要介绍了影响微电子器件可靠性的四个主要因素及其产生原理,并提出了提高微电子器件可靠性的解决方案及措施.
With the development of technology, information processing efficiency is continuously improved and microelectronic devices get smaller and smaller, thus the microelectronic device reliability becomes increasingly important. Microelectronic device reliability is mainly affected by the gate oxide, hot carriers, metallization, and electrostatic discharge. Based on a review of the research progress at home and abroad, this paper introduces the four factors that influence the reliability of microelectronic devices, and analyzes the action mechanism. Finally, some methods for solving these problems are suggested.
出处
《能源研究与信息》
2014年第1期52-57,共6页
Energy Research and Information
关键词
微电子器件
可靠性
热载流子
静电放电
microelectronic device
reliability
hot carrier~ electrostatic discharge
