摘要
采用对温度敏感的锑化铟(InSb)材料做基底设计了一种温控太赫兹波带阻滤波器。通过控制外部温度的高低来改变锑化铟基底的相对介电常数,从而实现对太赫兹波滤波器中心工作频率点的动态调节。计算结果表明,当温度由140 K增加到200 K时,该滤波器的中心频率从0.920 THz增加到1.060 THz,向高频方向移动了0.140 THz,且中心频率点的透射参数均小于–20 dB,获得良好的可调带阻滤波功能。
A thermally tunable terahertz wave band-stop filter was proposed by adopting InSb material as the substrate. As InSb is very sensitive to temperature, the relative permittivity of InSb substrate is altered with the change of temperature, and thus a continuously tuned terahertz wave band-stop filter was obtained. Calculating results show when the temperature increases from 140 K to 200 K, the centre frequency changes from 0.920 THz to 1.060 THz, the variation range is up to 0.140 THz and the transmission parameters of all the centre frequencies are less than -20 dB. It indicates that the filter achieves a efficient tunable band-stop filtering function.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2014年第5期57-60,共4页
Electronic Components And Materials
基金
浙江省自然科学基金资助项目(No.LR12F05001)
浙江省教育厅基金资助项目(No.Y201122282)
关键词
太赫兹波
锑化铟
等效电路模型
滤波器
开口谐振环
温控
terahertz wave
InSb
equivalent circuit model
filter
split-ring resonator
thermally tunable
