摘要
介绍了一种采用反应溅射工艺 ,通过控制不同气氛的分布制备VOx 薄膜的方法 ,并制备出电阻温度系数 (TCR)优于 - 2 %的非制冷红外探测器用VOx 薄膜。其XPS、XRD分析结果表明 ,薄膜的生长情况与制备工艺条件有密切关系。
Preparation of VO x films by reactive sputtering and controlling the distribution of gases is introduced. VO x films for uncooled infrared detectors with the TCR overmatch of -2% are successfully prepared. Study results of XPS and XRD are given, which show that the formation of VO x films is greatly dependent on the condition of preparation technology.
出处
《半导体光电》
CAS
CSCD
北大核心
2001年第1期38-40,共3页
Semiconductor Optoelectronics
