摘要
A silicon on reflector (SOR) substrate containing a thin crystal silicon layer and a buried Si/SiO 2 Bragg reflector is reported. The substrate, which is applied to optoelectronic devices, is fabricated by using Si based sol gel sticking and smart cut techniques. The reflectivity of the SOR substrate is close to unity at 1 3μm's wavelength under the normal incidence.
报道了一种包含一薄层单晶硅和隐埋 Si/Si O2 布拉格反射器的 SOR衬底 .这种可用于光电子器件的衬底是由硅基乳胶粘接和智能剥离技术研制而成的 .在垂直光照条件下 ,这种 SOR衬底在 1.3μm处的反射率接近10 0 %
基金
"973"计划! (批准号 :2 0 0 0 0 3 660 3 )
国家自然科学基金! (批准号 :6978980 2
698962 60 )资助项目&&
