摘要
采用计算机仿真技术研究了水平磁场作用下单晶硅的生长行为。结果表明,晶体旋转速度的增加对固-液界面形状的非对称性起到了一定的改善作用,也使得固-液界面向晶体侧推移。坩埚旋转速度的增加对熔体内温度分布起到改善作用,使得温度分布逐渐呈现出轴向均匀性。
The growth behavior of single crystal silicon in horizontal magnetic field was investigated by computer simulation technology. The results show that the asymmetry of solid-liquid interface shape is improved with the increase of the crystal rotation rate, and the solid-liquid interface moves to the crystal side. The temperature distribution in the melt is also improved with the increase of the crucible rotation rate, and becomes more uniform in axial direction.
出处
《铸造技术》
CAS
北大核心
2014年第5期1039-1041,共3页
Foundry Technology
关键词
单晶硅
水平磁场
温度场
single crystal silicon
horizontal magnetic field
temperature field
