摘要
在DSS法多晶硅生长中,为了降低氧碳含量,作者利用CGSim软件,分析了三种传统氩气导流系统的优缺点,以此为基础设计了一种中心和侧面双排气的新型导流系统,并对其进行了设计和数值模拟优化。模拟得出以下结论:多晶铸锭炉三种传统氩气导流系统中,石墨坩埚上部开大孔且有盖板时,有利于控制氧碳含量和固/液界面;新型多晶铸锭炉氩气导流系统中,中心氩气进口管伸入上盖板时,有利于降低多晶硅的氧碳含量;随着石墨坩埚上部开口高度h'逐渐增大,中心出口氩气流速逐渐减小,侧面出口氩气流速增大,当h'=20 mm时,有利于降低多晶硅的氧碳含量。研究结果为生长高质量的多晶硅提供了理论依据。
In order to decrease the O/C concentration in polysilicon growth processing, numerical analysis of three traditional Ar flow guide was provided by CGSim software. A new type of Ar flow guide with both center and side argon exit was designed and numerical optimized on the basis of above analysis. The modeling results showed that among the three traditional Ar flow guide system in DSS furnace, the upper graphite crucible with large hole and cover is better for the control of oxygen/carbon and the solid/ liquid interface. In the new design, with the increasing of the exit height on the upper graphite crucible, h＇, the central Ar flow rate is decreasing while the side is increasing. It is more favorable for the decrease of O/C concentration when the central Ar inlet Theoretical basis is provided by the results for the tube insert into the upper cover and h = 20 mm. growth of high quality muhicrystalline silicon.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2014年第5期1236-1242,共7页
Journal of Synthetic Crystals
基金
国家自然科学基金青年基金(51206069)
高等学校博士学科点专项科研基金(20123227120017)
江苏省自然科学基金青年基金(BK2012295)
江苏大学高级专业人才科研启动基金(1281130015)
江苏省博士后科研资助计划(1301049C)
关键词
多晶硅
数值模拟
氩气导流
固
液界面
polysilicon
numerical simulation
Ar flow guide
solid/meh interface
