摘要
VO2薄膜的电阻温度系数TCR(Temperature Coefficient of Resistance,用α表示)随温度改变会发生显著变化。因此,以VO2薄膜为热敏材料的非制冷探测器微桥像元采用1/R—(-αI2)曲线来测量微桥热导时,如果使用固定TCR数值,必然会对测量结果带来偏差。本文采用TCR逐点矫正的方法测量了非制冷微桥热导,并分析了有效热导,实验中的最大热导矫正率达到20.08%。采用本方法可使非制冷探测器微桥的热导测试结果更为准确,也更具有实际应用价值。
TCR (Temperature coefficient of resistance,α)of the VO2 thin film changes with temperature. So when the thermal conductance of VO2 microbridge pixel is tested by using the 1/R(-αI2 )curve method,certain deviation occurs if the TCR is treated as a constant. The test on the microbridge thermal conductance of the uncooled detector is carried out by using the TCR corrected 1/R-(-αI2 )curve method and effective thermal conductance is analyzed. The biggest correction ratio reached 20. 08% in the experiment. This method makes the thermal conductance test of the uncooled detector more precise and more practical.
出处
《激光与红外》
CAS
CSCD
北大核心
2014年第6期629-632,共4页
Laser & Infrared
关键词
非制冷探测器
热导
有效热导
电阻温度系数
微桥
uncooled detector
thermal conductance
effective thermal conductance
temperature coefficient of resist-ance
microbridge