摘要
借助电子背散射(EBSD)技术对AlN为主抑制剂的Hi-B取向硅钢常化工艺的中间冷却制度进行了研究。结果表明:常化后试样均发生了完全再结晶,在60℃/s冷速下组织最均匀;在合适的冷却制度下常化板表层保留了强的Goss织构,它深入到1/4厚度处,并且形成对Goss织构有利的强{554}<225>织构。
The intermediate cooling system of Hi-B oriented silicon steel with AlN main inhibitor in normalizing process was studied by means of electron back diffraction （EBSD） technique. The results show that ：the specimens after normalizing are fully recrystallization, and the microstructure is most uniform under the intermediate cooling rate of 60℃/s; under suitable cooling system, normalized plate surface retains strong Goss texture, it penetrates into the 1/4 thickness of the plate and forming strong {554}〈225〉 ,which is favorable to Goss texture.
出处
《热加工工艺》
CSCD
北大核心
2014年第11期27-30,37,共5页
Hot Working Technology
基金
国家自然科学基金资助项目(50934009)
