摘要
基于0.13μm部分耗尽绝缘体上硅(SOI)互补金属氧化物半导体(CMOS)工艺线,开发了全套0.13μm抗辐射SOI CMOS工艺的标准单元库。针对深亚微米SOI器件的辐射效应,在电路设计和版图设计上进行了加固,达到了比较好的抗辐射效果。对SOI标准单元库的建库流程的各方面做了比较深入的介绍,通过Hspice仿真验证单元库中加固D触发器(DFF)抗单粒子效应的能力并对不同加固方式的性能开销进行了对比。利用已建立的0.13μm抗辐射SOI CMOS标准单元库设计了测试芯片以验证库的可靠性。
Based on 0.13 μm partially depleted silicon on insulator complementary metal-ox- ide-semiconductor transistor （SOI CMOS） technology, a complete set of 0.13 μm radiation hard- ened SOI CMOS standard cell library was developed. In view of the radiation effect of deep sub- micron SOI devices, the radiation hardened design is conducted on the circuit and layout level and has achieved good anti-radiation result. In-depth introduction of the library building flow of the SOI standard cell is given, and Hspice circuit simulation is conducted to verify the effectiveness of radiation hardened DFF and performance overhead between different circuits is compared. The test chip is designed to validate 0.13 μm radiation hardened SOI CMOS standard cell library.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2014年第3期273-279,共7页
Research & Progress of SSE
