摘要
本文报道用分子束外延设备研制梯度折射率分别限制式单量子阱ＡｌＧａＡｓ／ＧａＡｓ脊形波导半导体激光器。该激光器具有良好的性能，条宽５μｍ器件室温阈值电流２３ｍＡ，线性连续输出单模激光功率大于１５ｍＷ。
Ridged-waveguide AlGaAs/GaAs single-quantum-well lasers with graded-index separateconfinement heterostructure were fabricated by molecular beam epitaxy. Fabricated dirge lasers exhibitedexcellent lasing characteristics including a low threshold current of 23mA (CW, 25℃, 5μm stripe). Continuous-wave laser output increases linearly with the drive current up to 15mW in single-mode operation.
出处
《激光技术》
EI
CAS
CSCD
1996年第3期177-181,共5页
Laser Technology
