摘要
本文研究了用电子束蒸镀工艺制备用于光波导器件的 Si O2 膜。采用高温退火处理工艺使 Si O2 膜的光学和物理特性稳定。在蒸镀过程中 ,输入不同压力的 O2 ,可以改变和控制 Si O2 膜的组分 ,达到控制膜折射率的目的。通过逐次蒸镀、退火的工艺 ,实现 1μm以上厚 Si O2 膜的制备。
Thick silicon dioxide films are prepared by electron beam evaporation technology at 200°C. The optical and physical characteristics of the SiO2 films can be stabilized after high temperature annealing processing. When evaporating, the composition of SiO2 films can be altered by introducing O2 with different pressure into the evaporation chamber, and the refractive index of SiO2 films can be controlled. The SiO2 films with thickness of 1 μm or more are fabricated after several steps of evaporation and annealing.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2001年第6期569-571,共3页
Journal of Optoelectronics·Laser
关键词
电子束蒸镀
集成光学
二氧化碳
薄膜
制备工艺
Annealing
Electron beams
Evaporation
Light refraction
Silica
Thick films
