摘要
提出了一种高温 SOI CMOS电路设计方法—自动体偏置多阈值电压 SOI CMOS(简称 ABB-MT- SOI CMOS: Auto- Bulk- Biased Multi- Threshold SOI CMOS)电路。文中主要讨论了 ABB-MT- SOI CMOS电路的结构与工作原理 ,设计与布局等,给出了内部电路电压和电流的模拟结果,并简述了该电路的应用前景。
A new design method of SOI CMOS circuits, a auto- bulk- biased multi- threshold SOI CMOS circuit(Abbreviated as“ ABB- MT- SOI CMOS” ),is put forward. The concept and structure of circuit are presented at first,then followed by the circuit implementation and its operating principle at high temperature,the considerations of its design and layout and the application potential of this kind of SOI CMOS circuits.
出处
《功能材料与器件学报》
CAS
CSCD
2001年第2期175-178,共4页
Journal of Functional Materials and Devices
基金
国家自然科学基金重点项目(69736020)