摘要
用Ｘ射线四晶衍射仪测量了不同温度下退火的注氢单晶硅的摇摆曲线，分析了不同温度退火后晶格内应力产生及消失的过程。并与离子背散射沟道分析进行了比较。结果表明，在４００℃左右，氢注入形成的氢复合体分解；形成氢分子，氢分子在晶格中聚集，生成氢气，在高温下膨胀，引起晶格形变，并产生缺陷；当退火温度达到５００℃以后，氢气的膨胀已超过晶体的屈服强度，产生了大量的缺陷、位错，同时在硅晶体内形成气泡，并在硅晶体表面造成砂眼、剥离等现象。
This work focuses on the rocking curves of H^+-implanted single silicon crystal detected by Four-Crystal X-ray diffractmeter. The samples were annealed under different temperatures. Lattice defect in H+-implanted silicon crystals was detected by Rutherford Backscattering Spectrometry. It appeared that H-related complex didn't crush until annealing temperature reached about 400C. At that temperature Hi was formed, deflated in silicon lattice and strained the lattice. But defects didn't come into being in large quantity. The lattice was undamaged. When annealing temperature reached 500, strain induced by H2 deflation crashed the silicon lattice. A large number of deflects were formed. At the same time bubbles in the crystal and blister/flaking on the surface could be observed.
出处
《核技术》
CAS
CSCD
北大核心
2000年第3期145-149,共5页
Nuclear Techniques
基金
国家自然科学基金!19775062
69976034
