摘要
在不同基体负偏压作用下，用阴极电弧离子镀等离子体物理气相沉积（ＰＶＤ）方法在单晶 Ｓｔ（１００）基片上获得六方晶系的晶态ＡｌＮ薄膜．用Ｘ射线衍射仪分析了沉积膜的物相组成和晶格位向随 偏压的变化，在扫描电子显微镜（ＳＥＭ）下观察沉积膜的显微组织形貌．结果表明，在较小偏压下，ＡｌＮ 膜呈（００２）择优取向，表面致密均匀；在较大偏压下，ＡｌＮ膜呈（１００）择优取向，表面形貌则粗糙不 平．ＡｌＮ薄膜的择优取向及表面形貌受到不同偏压下不同离子轰击能量的影响．
Hexagonal AlN thin films have been obtained by Physical Vapor Deposition(PVD) Cathodic Arc ion Plating on single-crystal Si(100) substrates at different negative biases. X-ray diffraction was used to analyze the phase constitution and the change of preferential orientation of the asdeposited films. The morphology of the as-deposited films was observed using Scanning Electron Mi- croscopy(SEM). The results show that AlN films with(002) preferred orientation have smooth surfaces at lower biases, while AlN films with(100) preferred orientation have rough surfaces at higher biases. The preferred orientation and the morphology Of AlN thin films are determined by the bombarding energy at different negative biases.
出处
《材料研究学报》
EI
CAS
CSCD
北大核心
2001年第6期675-680,共6页
Chinese Journal of Materials Research
