摘要
探讨了氮化铝 (Al N)粉末合成过程中 ,Al N粉末纯度和粒径与反应温度、反应时间、氮气气氛、活性碳、Al N晶体之间的关系 ,以及 Al N中 O的存在原因。结果表明 :反应温度对 Al N粉末纯度的影响远大于反应时间对其的影响 ;碳的活性直接关系到 Al N粉末的纯度和粒径 ;Al N晶种引入有助于降低反应活化能、细化晶格 ;Al N中 O来源于脱 C过程中形成的微晶态 Al2 O3。上述诸多因素对高纯超细 Al N粉末的合成起着重要的作用与影响。
The function parity and power size of nitride aluminum with temperature and duration of reaction, nitride atmosphere, active carbide and particle crystals of AIN, as well as cause of presence of O in AIN.The result shows that the effect of reaction temperature is much higher than that of its duration.The activity of carbide directly determines the purity and particle size of AIN. The introduction of AIN particle crystal can reduce energy of activity in reaction, reduce crystal lattice.The origin of presence O and AIN is microcrystalline Al\-2O\-3 created in decarbonation.All those factors effect the synthesis of high purity ultra fine AIN powder.
出处
《电瓷避雷器》
CAS
北大核心
2001年第6期34-36,共3页
Insulators and Surge Arresters
关键词
氮化铝粉末
半导体化合物
半导体材料
nitride aluminum
high purity
ultra fine
powder synthesis
factor study
