摘要
采用sol gel法制备了SnO2 薄膜。研究了不同的实验条件对薄膜阻值的影响。利用XRD、XPS分析了薄膜的晶体结构和晶粒尺寸。利用这种低阻SnO2 薄膜制作的热线型气敏元件对H2
The SnO 2 thin film of low resistant was prepared by sol gel method. The relation between the prepared condition and the resistance of the thin film has been studied. XRD and XPS were employed to investigate the structure and micrography of SnO 2 thin film. The direct heat gas sensor prepared with SnO 2 thin film is sensitive for H 2S gas.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2001年第6期645-646,648,共3页
Journal of Functional Materials
基金
国家自然科学基金资助项目 (697740 2 7)
