摘要
通过分析白光干涉谱 ,计算出生长在 Ga As衬底上的氮化镓薄膜厚度。
The thickness of GaN films grown on GaAs substrate are calculated,through analyzing the white-light interference pattern in this paper.The information of the interference pattern and the way of data processing are discussed in details.
出处
《应用光学》
CAS
CSCD
2001年第6期28-30,共3页
Journal of Applied Optics