摘要
分析了在 ECR-MOCVD装置上外延生长 Ga N单晶薄膜的工艺过程特点和在此过程中影响 Ga N结晶质量的主要因素 .在此基础上 ,设计了一套由 80 C31单片机为核心的光电隔离电路和 PC机组成的两级系统 ,用于 Ga N薄膜外延生长的工艺流程监控 .并提出了一种合适的工艺流程监控策略 ,阐述了如何从软件上确保工艺流程的连续可靠运行 .实践证明 ,软硬件系统设计合理、抗干扰措施完善 ,很好地保证了工艺流程的连续可靠运行 ,实验数据的可靠性和工艺流程的可重复性也大大提高 ,并对类似系统的工艺过程自动化设计具有一定的指导借鉴意义 .
The authors analyze the process characteristics of epitaxy growth for GaN single crystal films using ECR MOCVD devices, and the main factors which affect the GaN crystalline quality during the epitaxy growth. Then, the authors design a set of monitoring system comprised of PC and photoelectric circuits based on 80C31 microcomputer, which is used in the epitaxy growth process of GaN film. At the same time, the authors propose a kind of suitable monitoring method for process, and explain the software measures used to ensure continuous, stable growth process. The practical application shows that the designed software and hardware systems are reasonable, and it also shows that the anti interference design is perfect. All of these ensure that the growth process is continuous and stable. Meanwhile, the accuracy of the experiment parameters and the reproducibility of the growth process are improved significantly. It also has guidance value for automatic design of similar growth process to some extent.
出处
《大连理工大学学报》
CAS
CSCD
北大核心
2001年第6期701-706,共6页
Journal of Dalian University of Technology
基金
国家"8 6 3"项目新材料领域课题 ( 715 -0 11-0 0 33)
国家自然科学基金资助项目 ( 6 9976 0 0 8)
