摘要
阐述了一种能够仿真PIN二极管传导EMI的高频模型。该模型全面考虑了二极管的正向恢复、端区复合以及空间电荷区边界移动效应 ,并且利用Saber的MAST语言得以实现。仿真和实验结果的比较也证明了该模型的正确性和准确性。
A high frequency model of PIN diode for simulating conducted EMI is developed.The model takes into consideration of forward recovery,reverse recovery,emitter recombination and movable bound effect and is completed by MAST in Saber.The comparison between simulation and experiment verifies the model availability.
出处
《电力电子技术》
CSCD
北大核心
2001年第6期48-51,共4页
Power Electronics
基金
国家自然科学基金资助 (5 0 0 770 2 0 )
