摘要
采用脉冲准分子激光大面积扫描沉积技术，在Ｓｉ（１１１）单晶衬底上沉积了 ＷＯｘ薄膜．采用Ｘ射线衍射（ＸＲＤ）、喇曼光谱（ＲＳ）、付里叶红外光谱（ＦＴ－ＩＲ）及透射电镜扫描附件（ＳＴＥＭ）对不同条件下沉积的样品进行了结构分析．结果表明，氧分压和沉积温度是决定薄膜结构和成份的主要参数．在沉积温度３００℃以上及２０Ｐａ氧压下得到了三斜相纳米晶ＷＯ３薄膜．
WO,, thin films were successfully synthesized on Si (111) substrate at different conditions by using scanning excimer laser ablation technique. The structure of WOx thin films deposited at different conditions was analyzed by STEM, XRD, RS. The thin films deposited at 300 and 400degreesC under 20Pa oxygen pressure showed nano-crystalline triclinic structure. The experimental results illustrate that the oxygen pressure and the deposition temperature are two important parameters for determining the structure and chemical composition of the synthesized thin films.
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
2002年第1期139-144,共6页
Journal of Inorganic Materials
基金
国家自然科学基金(19775016)
湖北省自然科学基金(99J049)
