摘要
Ultra thin epitaxial CoSi 2 films are fabricated by solid state reaction of a deposited bilayer of Co(3nm)/Ti (1nm) on n Si(100) substrates at different temperatures.The local barrier heights of the CoSi 2/Si contacts are determined by using the ballistic electron emission microscopy (BEEM) and its spectroscopy (BEES) at low temperature.For CoSi 2/Si contact annealed at 800℃,the spatial distribution of barrier heights,which have mean barrier height of 599meV and a standard deviation of 21meV,obeys the Gaussian Function.However,for a sample that is annealed at 700℃,the barrier heights of it are more inhomogenous.Its local barrier heights range from 152meV to 870meV,which implies the large inhomogeneity of the CoSi 2 film.
通过在硅 (10 0 )衬底上淀积的 Co(3nm ) /Ti(1nm )双金属层在不同退火温度下的固相反应 ,在硅衬底上制备了超薄外延 Co Si2 薄膜 .在低温下 ,用弹道电子显微术 (BEEM)及其谱线 (BEES)测量了 Co Si2 /Si接触的局域肖特基势垒高度 .对于 80 0℃退火的 Co Si2 /Si接触 ,势垒高度的空间分布基本符合高斯分布 ,其峰值在 5 99me V,标准偏差为 2 1me V.而对于 70 0℃退火样品 ,势垒高度分布很不均匀 ,局域的势垒高度值分布在 15 2 me V到 870 m e V之间 ,这可归因于 Co Si2
基金
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