摘要
绝缘膜正带电现象在集成电路芯片低能电子束检测方面具有可以利用的前景。采用简化的表面电位分布模型 ,通过数值方法计算了二次电子从正带电绝缘膜表面发射后的运动轨迹 ,分析了初始条件和电位分布形态对轨迹特性的影响。在轨迹计算和考虑二次电子发射概率分布的基础上得到了二次电子受局部电场作用而返回表面时的最大初始动能、分布规律 ,提出了通过简单的一维势垒模型来确定二次电子返回率的方法 。
The recently observed fact that positively charged insulating film surfaces result in static capacitance contrast has attracted much of our interest because this phenomenon may possibly be utilized to better the low electron beam testing of integrated circuits chips.A novel numerical simulation of the trajectory of the secondary electron(SE) emitted was developed with two different positively charged insulator surface potential models.Influence of the initial conditions of the emitted SE and the spatial potential distribtuion on its trajectory was analyzed.Properties of the returning SE to the surface,such as its critical initial kinetic energy and its spatial distribution,were evaluated.An approximation was proposed to estimate the returning probability and the distribution of the returned SE.
出处
《真空科学与技术》
EI
CAS
CSCD
北大核心
2002年第1期24-28,共5页
Vacuum Science and Technology
基金
教育部留学回国人员科研启动基金资助项目 (教外司留 [1996] 64 4号 )
