摘要
介绍了氧化锌的应用和制备方法 ,着重研究了磁控溅射中各生长参数如衬底温度。
The application and preparation of ZnO film are disscussed.The special attention is focused on the parameters,such as substrate temperature,oxygen partial pressure and working pressure,which effect the crystal quality and electrical properties of ZnO film in MC sputtering.
出处
《半导体情报》
2001年第6期55-58,共4页
Semiconductor Information
基金
重大国家基础研究基金项目资助 (G2 0 0 0 0 683 -0 6)
关键词
氮化锌
磁控溅射
生长参数
薄膜性能
ZnO
substrate temperature
oxygen partial pressure
carrier concentration
electrical resistance
mobility
