摘要
本文设计了一种由磷化铟(InP)、砷化铟(InAs)和锑化铟(InSb)三种半导体材料以及电介质材料堆叠而成的锥形光栅等离子体超宽带红外线吸收器,利用表面等离子体共振效应对入射电磁波实现吸收。我们采用频域有限差分法(FDFD)对此吸收器性能进行探究,在经过大量计算后得到了最优化结构参数,在入射角范围0~80°和入射波长为28~60μm红外波长范围内实现了92%以上的高效吸收。此外,我们还研究了各结构参数对吸收效果的影响,结果表明:复合层数以及半导体材料的厚度对吸收率的影响相对较大,而复合层宽度、电介质材料厚度对吸收率的影响较小。本文所设计的吸收器有望在红外探测、光谱学等方面得到应用。
A tapered grating-type plasmonic ultra-broadband infrared absorber,which is stacked by three kinds of semiconductors:indium phosphide(InP),indium arsenide(InAs),indium antimonide(InSb)and a dielectric material,is presented in this paper.The excellent absorptivity of the proposed absorber is achieved by the surface plasmon resonance effect.We use the frequency domain finite difference method(FDFD)to explore the property of the structure.And after a multiple experiments,the optimal structural parameters are obtained to achieve high efficiency absorption,more than 92%,in the range of 28~60μm and 0~80°.In addition,the dependence of absorptivity on the structure parameters is also studied:the number of the composite layer and the thickness of the three semiconductor materials have a relatively great influence on the absorption properties,while the width of the composite layer and the thickness of the dielectric material have less influence on the absorption properties.The absorber designed in this paper is expected to be applied in infrared detection and spectroscopy.
作者
赵晨
薛文瑞
陈曦
陈岳飞
李昌勇
ZHAO Chen;XUE Wen-rui;CHEN Xi;CHEN Yue-fei;LI Chang-yong(College of Physics and Electronic Engineering,Shanxi University,Taiyuan 030006,China;State Key Laboratory of Quantum Optics and Quantum Optics Devices,Institute of Laser Spectroscopy,Shanxi University,Taiyuan 030006,China;Collaborative Innovation Center of Extreme Optics,Shanxi University,Taiyuan 030006,China)
出处
《量子光学学报》
北大核心
2018年第4期420-429,共10页
Journal of Quantum Optics
基金
国家自然科学基金(61378039
61575115)
国家基础科学人才培养基金(J1103210)
关键词
等离子体
吸收器
红外线
超宽带
半导体
plasmon
absorber
infrared
ultra-broadband
semiconductor
