摘要
采用粒子网格(PIC)法与Monte Carlo碰撞(MCC)模型相结合的方法(PIC/MCC法),研究了在射频空心阴极放电系统中,负直流偏压(-10～-50 V)对放电特性的影响。通过模拟获得了在不同的外加负直流偏压下,空心电极孔内的电子密度、径向电场、轴向电场等参数的变化。计算结果表明,随着偏压从-10增加到-50 V,阴极孔内电子密度和径向、轴向电场逐渐增大;加偏压的孔内电子密度和径向、轴向电场比不加偏压的更大。从放电早期到达到稳定放电的过程中,电子逐渐从接地阳极附近移入空心电极孔内,孔内电子密度和径向、轴向电场随时间增长而增大;在同一时刻,放电系统施加偏压的孔内电子密度和径向、轴向电场比不加偏压的更大。达到稳定放电后,孔内电子密度和径向、轴向电场等不再发生变化。
The RF hollow cathode discharge was mathematically formulated with 2-D particle-in-cell/Monte Carlo collision (PIC-MCC)model and numerically simulated with PIC/MCC software.The influence of the biasvoltage,on the discharge properties,including the electron peak density and electric field profile in the hollow cathode,was investigated.The simulated results show that the bias voltage has a major impact.To be specific,as the bias voltage increases from -10into -50V,the peak electron density,radial-and axial-field distributions,much large than those without bias voltage,significantly increase.In approaching to steady discharge state,the increasing bias voltage strongly drives electrons from the vicinity of grounded anode into the hollow electrode hole,resulting in considerable enhancement of the highly stable peak electron density and e-field profile.
作者
贺柳良
欧阳吉庭
黄伟
马黎君
He Liuliang;Ouyang Jiting;Huang Wei;Ma Lijun(College of Science ,Beijing University of Civil Engineering and Architecture ,Beijing100044,China;School of Physics,Beijing Institute of Technology,Beijing 100081,China)
出处
《真空科学与技术学报》
EI
CAS
CSCD
北大核心
2018年第12期1075-1079,共5页
Chinese Journal of Vacuum Science and Technology
基金
北京建筑大学市属高校基本科研业务费专项资金资助(X18221)
国家自然科学基金项目(11005009)
关键词
射频放电
空心阴极放电
直流负偏压
PIC/MCC模拟
Radio frequency discharge
Hollow cathode discharge
DC negative bias voltage
PIC/MCC simulation
