摘要
介绍一种SOI/CMOS数模转换器的设计和工艺。电路采用了SOI(SiliconOnInsulator)材料代替常规的体硅,使电路具有高速、抗辐照的特点;同时,电路采用独特分段结构和3—7温度编码电路,降低了对R—2R电阻网络的精度要求,提高了转换精度。
The design and fabrication of a kind of twelve-bit SOI/CMOS DAC is introduced. The circuits adopt SOI (Silicon On Insulator) instead of body Silicon, So the circuits have the advantages as high speed, anti-irradiation. And the circuits have special structure of segments and three-to- seven encoder, reducing the demand to resolution of R—2R net and improving the resolution of DAC circuits.
出处
《功能材料与器件学报》
CAS
CSCD
2002年第1期49-52,共4页
Journal of Functional Materials and Devices
基金
国家重点基础专项经费G20000365
上海市科学发展基金项目(No.99JC14012)
