摘要
本文研究了HFCVD系统中覆盖有C60 膜的Si(10 0 )衬底上金刚石的成核与形貌特征。结果表明 ,C60 能大幅度提高金刚石成核密度 ;C60 氢化预处理能大幅度促进金刚石成核 ,但要合理控制CH4 的浓度和预处理时间 ;随衬底温度的升高 。
The nucleation and morphology of diamond on Si(100) substrate coated with C 60 film in HFCVD system is studied in this paper.It is indicated that C 60 can greatly enhance the diamond nucleation density.The C 60-hydrogenated pretreatment can enhance the diamond nucleation greatly.However,it is very important to control the CH 4 concentration and pretreatment time correctly.The diamond particles change from ball-like to cauliflower-like small crystalline aggregates when the substrate temperature increases.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2002年第2期153-157,共5页
Journal of Synthetic Crystals
基金
国家自然科学基金资助项目 (No .5 96 82 0 0 5 )
