摘要
ＺｎＯ：Ａｌ（ＺＡＯ）是一种简并半导体氧化物薄膜材料，具有高的载流子浓度和大的光学禁带宽 度，因而具有优异的电学和光学性能，极具应用价值．对于其能级高度简并的ＺＡＯ半导体薄膜材料，在 较低的温度下，离化杂质散射占主导地位；在较高的温度下，晶格振动散射将成为主要的散射机制；晶界散 射仅当晶粒尺寸较小（与电子的平均自由程相当）时才起作用， 本文介绍了ＺＡＯ薄膜的制备方法、晶体 结构特性。
ZnO: Al (ZAO)is one of highly degenerate semi-conductive oxide films. Due to both high carrier concentration and large optical band gap, ZnQ:Al has outstanding electrical and optical properties, and is emerging as a most potential alternative candidate for transparent conducting materials. The crystal structure and preparation of Al-doped ZnO films, as well as their electrical and optical properties and corresponding scattering mechanism are summarized in this paper. For highly degenerate ZnO:Al semiconductor thin films, it was revealed that the ionized impurity scattering dominated the hall mobility of films in the low-temperature range; while the lattice vibration became a major scattering mechanism in the high-temperature range. The grain boundary scattering only played a major role in the ZAO films with small grain size (as compared to the electron mean free path). The proposal for the future research is also offered.
出处
《材料研究学报》
EI
CAS
CSCD
北大核心
2002年第2期113-120,共8页
Chinese Journal of Materials Research
基金
国家自然科学基金资助项目50172051.
