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硫系Ge-As-S玻璃和薄膜的特性 被引量:2

PROPERTIES OF Ge-As-S CHALCOGENIDE AMORPHOUS SEMICONDUCTOR
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摘要 用差热分析、X射线衍射分析和透射光谱分析等手段研究了硫系 Ge-As-S玻璃和薄膜的 性能 结果表明.Ge-As-S体系的成玻能力较强.在空气中自然冷却就能成玻.其(Tg-Tc)/Tg值为 0.127~0.289.经激光辐照Ge-As-S玻璃薄膜的透射光谱曲线向短波方向移动.且平移的大小随激 光功率的增加而增加,薄膜的透射光谱线的平移表明激光辐照导致薄膜光致结构变化,利用电子束辐射极 化,通过Maker条纹测试方法在Ge-As-S玻璃中观察到二次谐波。 Ge-As-S bulk glasses and films deposited by pulse laser were studied by the differential thermal analysis, X-ray diffraction analysis and transmittance spectra analysis technologies. The results indicated that the Ge-As-S system has better glass-forming ability and the (Tg-Tc)/Tg is 0.127-0. 278. The XRD results showed that the Ge-As-S bulk and film were amorphous. The transmittance spectra of bulk glasses, as-deposited films and illuminated films were different and the spectra of illuminated film shifted to shorter wavelength. The magnitude of shift increased with the increase of the intensity of the illumination light. The shift means that photoinduced change by Ar ion laser illumination happened in Ge-As-S system. By the method of Maker, second harmonic generation was observed in the Ge-As-S bulk glass poled by the electron beam.
出处 《材料研究学报》 EI CAS CSCD 北大核心 2002年第2期164-167,共4页 Chinese Journal of Materials Research
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同被引文献29

  • 1韩聚广,白迎新,姜中宏.石英玻璃结构调整和二阶非线性光学效应产生机制的理论研究[J].中国激光,1996,23(6):531-536. 被引量:4
  • 2顾少轩,胡海平,郭海涛,袁凯,赵修建.GeS_2-Ga_2S_3-CdS硫系玻璃的电致二阶非线性光学效应[J].中国激光,2006,33(5):687-691. 被引量:9
  • 3顾少轩,赵修建.Ge-Ga-S-CdS玻璃的电致二次谐波发生特性[J].材料研究学报,2007,21(3):305-310. 被引量:1
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